* VDS =30V,ID =100A RDS(ON) <2.5 mΩ @ VGS=10V RDS(ON) <3.5mΩ @ VGS=4.5V
* High density cell design for ultra low Rdson
* Fully characterized avalanche voltage.

General Features
* VDS =30V,ID =100A RDS(ON) <2.5 mΩ @ VGS=10V RDS(ON) <3.5mΩ @ VGS=4.5V
* High density cell d.

The NCE30H10G uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features
* VDS =30V,ID =100A RDS(ON) <2.5 mΩ @ VGS=10V RDS(ON) <3.5mΩ @ VGS=4.5.

NCE30H10

NCE30H10K

NCE30H11G

NCE30H12

NCE30H12K

NCE30H15

NCE30H15K

NCE30H21

NCE30H29D

NCE30H32WD

NCE3007S

NCE3008M

NCE3010S